Semiconductors > Transistors > RF Small Signal Field-Effect T

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Manufacturer MICROCHIP MOTOROLA NATIONAL SEMICONDUCTOR NXP ON SEMICONDUCTOR

Additional Feature LOW NOISE

Configuration SINGLE

Drain Current-Max (ID) 0.03

DS Breakdown Voltage-Min 20 25 30

Feedback Cap-Max (Crss) 0.4 0.8 2 2.5 4

FET Technology JUNCTION

Highest Frequency Band ULTRA HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND

IHS ObjectID 1061904103 1437071199 1443125763 1531631983 1814352397 MCHP00000122606

JEDEC-95 Code TO-18 TO-236AB TO-92

JESD-30 Code O-MBCY-W3 O-PBCY-T3 R-PDSO-G3

JESD-609 Code e0 e3

Moisture Sensitivity Level 1

Number of Elements 1

Number of Terminals 3

Operating Mode DEPLETION MODE

Operating Temperature-Max 150 200

Package Body Material METAL PLASTIC/EPOXY

Package Shape RECTANGULAR ROUND

Package Style CYLINDRICAL SMALL OUTLINE

Peak Reflow Temperature (Cel) 240 260 NOT SPECIFIED

Polarity/Channel Type N-CHANNEL

Power Dissipation-Max (Abs) 0.225 0.25 0.3 0.36

Power Gain-Min (Gp) 10

Qualification Status Not Qualified

Sub Category Other Transistors

Surface Mount NO YES

Terminal Finish Tin (Sn) TIN LEAD Tin/Lead (Sn/Pb)

Terminal Form GULL WING THROUGH-HOLE WIRE

Terminal Position BOTTOM DUAL

Time@Peak Reflow Temperature-Max (s) 30 40 NOT SPECIFIED

Transistor Application AMPLIFIER SWITCHING

Transistor Element Material SILICON

Part Number	Description	In Stock
MMBF4416 Mfr: on semiconductor	SOT23-3/N-Channel RF Amplifier	3000
2N5248 Mfr: national semiconductor	Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92	986
PMBFJ308 Mfr: nxp	RF Small Signal Field-EffectTransistor,1-Element,Very High Frequency Band,Silicon,N-Channel,Junction FET, TO-236AB	497
MMBF4416LT1 Mfr: on semiconductor	RF Small Signal Field-EffectTransistor,1-Element,Ultra High Frequency Band,Silicon,N-Channel,Junction FET, TO-236AB	20
2N4416 Mfr: motorola	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL,JFET,TO-18	6
description1 Mfr: manufacturer	ext_desc	0
2N4416A Mfr: microchip	JFET. - Transistor Devices HRDS Product Line	0
BF513,215 Mfr: nxp	RF Small Signal Field-EffectTransistor,1-Element,Very High Frequency Band,Silicon,N-Channel,Junction FET	0
BF992,215 Mfr: nxp	Power Bipolar Transistor, 3A I(C), 80VV(BR)CEO,1-Element, NPN, Silicon, TO-225AA,Plastic/Epoxy, 3Pin	0
MMBFJ310LT1G Mfr: on semiconductor	MMBFJ310LT1G Series N-Ch 25 V 10 mA VHF/UHF Amplifier Transistor JFET - SOT-23	0